Graphene-GaN Schottky Photodiodes

Graphene-GaN Schottky Photodiodes is the development of the world's first graphene-based GaN Schottky device that has the potential to achieve a much greater total quantum efficiency in UV. The objective of this project is to characterize the Schottky barrier height for graphene and the total quantum efficiency (QE) of the graphene-GaN Schottky diodes. Integration of graphene as the top metal on GaN Schottky. This will replace platinum, which is 50% transparent at the desired wavelength, with graphene, which has higher mobility and much higher transparency (>90%). Develop a fabrication process for GaN Schottky and a chemical vapor deposition process for large area graphene. Develop a process to cleanly integrate single or multilayer graphene on GaN devices and pattern them. Develop a characterization scheme to determine the Schottky barrier height of graphene and device QE.

Future UV space missions in multiple LOB. Earth Science missions such as GOES-R and SORCE, Planetary Science missions such as VCM, JEO, UOP and EO, Heliophysics missions such as LCAS and Explorers. EVE/ESP channel on the SDO.

This is early/mid-stage (TRL 3) — the most realistic path in is NASA SBIR/STTR, which funds small businesses and research institutions to develop technology aligned with NASA's needs (equity-free, phased funding). Check whether a current SBIR/STTR solicitation topic overlaps with this project's technology area, or contact the project directly (above) to ask.

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