AlGaN-based Electronic Devices for Remote Sensing Applications in Extreme Environments

This project aims to develop and advance radiation-hardened power electronic and optoelectronic devices capable of operating in extreme environments by studying the impact of operation under high temperature and high radiation on the stability and performance of AlN-based Schottky and p-n diodes. In order to fabricate these devices, conductive n- and p-type AlN must be demonstrated. Using established point defect management methods to manage compensation, highly conductive AlN can be realized via impurity band conduction. Once this is achieved, devices will be fabricated using established methods, such as metal-organic chemical vapor deposition (MOCVD), reactive ion etching (RIE) and photolithography. Devices will be characterized using a high-temperature probing station capable of reaching temperatures up to 1000oC, which allows assessment of device operation under these conditions. Additionally, the effect of high radiation environments will be investigated via radiation dose testing at the Jet Propulsion Laboratory. The fabricated devices will be extensively characterized in order to identify the failure mechanisms, which will then be addressed by modifying device design. In addition to demonstrating conductive n- and p-type AlN, we aim to show kV-class devices capable of operation at temperatures >500oC and under high radiation environments. At the end of this effort, we aim to expand the developed extreme environment capable technology to other device examples, such as solar blind deep-UV APDs.

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