Rad-Hard Ga2O3 Diodes

In this Phase II program, Kyma Technologies will advance the state of the art in kV-class Schottky barrier diode devices utilizing gallium oxide (Ga2O3) materials and domestically produced, chemically pure halide vapor phase epitaxy (HVPE)-derived epilayers. Devices will be tested for radiation hardness and radiation effects will be simulated to assist in rad-hard device design. These exciting new devices are poised to offer significant improvements in size, weight, and efficiency over the current state-of-the-art heavy-ion SEE-tolerant silicon power devices. While the rad-hardness of Ga2O3 has only begun to be studied in earnest and device robustness against radiation remains to be experimentally proven, its material properties suggest that it is a semiconductor with much promise for power electronics in high radiation environments. Ga2O3 is well-poised for success at this time despite its relative immaturity when compared to other semiconductor materials because bulk crystals of Ga2O3 can be relatively easily grown from a melt even with its wide bandgap, similar to the way that silicon or gallium arsenide wafers are produced. Because of this, the crystalline quality of Ga2O3 -based epilayers already compares well to the best GaN or SiC crystals and therefore high-quality devices have already been demonstrated and may exhibit superior radiation tolerance over other wide bandgap power devices. Preliminary radiation testing showed several Ga2O3 diodes to be tolerant of ion irradiation under reverse bias conditions up to ~30-40% of their nominal breakdown voltages.  The primary technical objectives of this Phase II program are 1) to advance the state of the art in kV-class Schottky barrier diode devices utilizing Ga2O3 materials and domestically produced, chemically pure halide vapor phase epitaxy (HVPE)-derived epilayers and 2) to study ion radiation effects in the diodes, developing models to simulate radiation effects in these high-performance devices which are poised to offer improvements in size, weight, and efficiency over devices prepared from other wide-bandgap semiconductor materials.  Deliverables for this program will include: Quarterly reports on progress within the program and updates on program Milestones as well as packaged Schottky Barrier Diodes for evaluation by interested parties.   

Applications for NASA include kilowatt-class power distribution systems for space vehicles and future lunar or Martian habitats. Additionally, power systems with reduced energy losses for remote sensing instruments or sensors for use in Saturn missions, Jovian moon missions, Venus missions, and deep space exploration are potential applications. Applications outside of NASA include industrial motor drives, PV inverters, hybrid and electric vehicles, and inverters for wind turbines.

This is early/mid-stage (TRL 4) — the most realistic path in is NASA SBIR/STTR, which funds small businesses and research institutions to develop technology aligned with NASA's needs (equity-free, phased funding). Check whether a current SBIR/STTR solicitation topic overlaps with this project's technology area, or contact the project directly (above) to ask.

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