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Radiation-Tolerant Vertical GaN Diodes

Completed TRL 5 (started at 3, targeting 5)

Description

In this Phase I program, Kyma Technologies will advance the state of the art in kV-class Schottky barrier diode devices utilizing GaN materials and domestically produced, chemically pure halide vapor phase epitaxy (HVPE)-derived epilayers and study radiation effects in these exciting new devices which are poised to offer improvements in size, weight, and efficiency over devices prepared from other wide-bandgap semiconductor materials.

Benefits

Applications for NASA include kilowatt-class power distribution systems for space vehicles and future lunar or Martian habitats. Additionally, power systems with reduced energy losses for remote sensing instruments or sensors for use in Saturn missions, Jovian moon missions, Venus missions, and deep space exploration are potential applications.

Applications outside of NASA include industrial motor drives, PV inverters, hybrid and electric vehicles, and inverters for wind turbines.

Details

Technology areaSensors and Instruments > Remote Sensing Instruments and Sensors > Detectors and Focal Planes
ProgramSmall Business Innovation Research/Small Business Tech Transfer (SBIR/STTR)
Lead organizationKyma Technologies, Inc., Raleigh, NC
Start date2022-07-25
End date2023-01-25

Project contacts

Listed on TechPort itself — the most direct way to ask about this specific project.

How to get involved

This is early/mid-stage (TRL 5) — the most realistic path in is NASA SBIR/STTR, which funds small businesses and research institutions to develop technology aligned with NASA's needs (equity-free, phased funding). Check whether a current SBIR/STTR solicitation topic overlaps with this project's technology area, or contact the project directly (above) to ask.

None of these are guaranteed paths for this specific project — TechPort itself doesn't have an "apply" button. Reaching out to the contact(s) above with a specific question is usually the fastest way to find out what's actually open.