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Completed TRL 4 (started at 2, targeting 4)
First we are developing chipset characterization models for ultra-fast field effect transistors (FETs) based on rhombohedral super-hetero-epitaxy technology. The chipsets built with single crystal SiGe exhibiting its mobility 2 to 5 times higher than c-Si will offer ultra-fast RFICs for communication and satellite telemetry systems, in addition to general purpose ICs.
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This is early/mid-stage (TRL 4) — the most realistic path in is NASA SBIR/STTR, which funds small businesses and research institutions to develop technology aligned with NASA's needs (equity-free, phased funding). Check whether a current SBIR/STTR solicitation topic overlaps with this project's technology area, or contact the project directly (above) to ask.
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