Graphene Frequency Multiplier for Harsh Environment Communications

Goal: To prove the viability of the graphene technology for extreme environments, in order to complement the Long-Lived In-situ Solar System Explorer (LLISSE) effort. Capability Need/Knowledge Gap: Most of the sensor development, based on SiC, is on schedule. The 100 MHz communications system is the sine qua non for the LLISSE mission. We have a solution to greatly retire the risks of that system. And, our solution is versatile. Given the arduous task of achieving a 100 MHz SiC oscillator that can function for an extended period at 460 °C , we propose a hybrid SiC/graphene circuit. Specifically, we hypothesize that a 10 MHz SiC oscillator is tractable in a reasonably short timeframe, and propose integrating such an oscillator with a graphene frequency multiplier. We believe that hybridization of SiC and graphene will be the electronics materials of choice for future high temperature devices. State-of-the-Art/Knowledge: Assumes a SiC amplifier would roll-off at a typical 20 dB per decade, the fT of the SiC technology would need to be around 500 MHz to achieve sufficient output power and gain as a standalone device. Key Technical Challenges: Processing graphene-based nanodevices at the wafer scale; Using electron-beam lithography in conjunction with conventional UV photolithography to realize microwave power detectors. Approach/Research Plan: (1) GFET design and mask layout; (2) L-C multiplier design/component selection/test; (3) ab/test GFET multiplier with ≈10 MHz oscillator; and, (4) Integrate GFET and L-C multiplier and test. We intend to efficiently exploit the quadratic transfer characteristic of GFET devices to enable frequency multiplication; fabricate reliable ohmic contacts to withstand 460 °C ; and develop a compatible L/C network to pick-off third harmonics and appropriately terminate other generated frequencies. Furthermore, we will leverage ongoing LLISSE SiC oscillator and circuit component development (to provide fundamental rf source and filter components) and integrate a GFET & high temperature inductor/capacitor filter to demonstrate ≈100 MHz operation. Next Step: Successful demonstration of the GFET-based frequency multipliers that operate in a Venus-like environment will lead to further research and development regarding integration and manufacturing scale-up.We will seek a follow-on activity to integrate a GFET/SiC transmitter in a Venus-like environment.

While SiC sensor technology has matured significantly, high frequency operation of SiC device remains elusive. The lynchpin of the LLISSE lander is the 100 MHz communications system. While there is some work on GFET technology in academia, that work has mostly been limited to room temperature and lower frequency operation.

This is a mature technology (TRL 7+) — the realistic path in is usually NASA's Technology Transfer Program: licensing an existing NASA patent, or a Space Act Agreement to use NASA facilities/expertise directly. NASA also runs a startup licensing program with no upfront fee for companies formed to commercialize a specific NASA technology.

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