Single Event Burnout Hardened High-power Diamond Devices

Electrical power management designed for use in spacerequireselectronics capable of operating without damage in the galactic cosmic ray space radiation environment. Unfortunately, the adoption of SiC and GaN technology into space applications is hindered by their susceptibility to permanent degradation and catastrophic failure from single-event effect heavy-ion exposure. This degradation occurs at 50% of the rated operating voltage, requiring the operation of SiC/GaN devices at de-rated voltages. Diamond is one of the candidate materials for the next-generation WBG semiconductor devices capable of overcoming the current limitations of SiC/GaN technology. In addition to having the highest breakdown field, it has the highest p-type conductivity, making it a unique p-channel material for power electronics. It also holds a solid hope to be hardened against single-event burnout (SEB) due to its superior thermal conductivity and ability to maintain excellent crystallinityunder heavy ion exposure. Euclid Beamlabs, in collaboration with Rensselaer Polytechnic Institute, will develop a new quasi-lateral diamond power MOSFET (QLDT) that will overcome current limitations by combining the inherent advantages of diamond material, SEB hardened transistor design with advanced 3D femtosecond laser writing capabilities of micrometer-scale conductive structure fabrication inside the diamond. The projects primary focus is developing a SEB-tolerantdiamond transistor design with a 2D Hole Gasconductive channel and graphitized embedded connections. The targeted specifications are a 1,200+ V voltage rating with 1.0 mOhm-cm2specific on-resistance. In Phase II, we will focus on the 3D simulations of QLDTsat supercomputer facilities.Thenwe evaluate the SEB performance of QLDTs under varying conditions.We will also fabricate a QLDT prototype following the fabrication process flow outlined in Phase 1. The prototype will be tested at the heavy-ion terrestrial facility. Electrical power management designed for use in space requires electronics capable of operating without damage in the harsh radiation environment. Unfortunately, the adoption of  SiC/GaN technology into space applications is hindered by their susceptibility to permanent degradation and catastrophic failure from single-event effect heavy-ion exposure.  Diamond is one of the candidate materials for the next-generation WBG semiconductor devices capable of overcoming the current limitations of SiC/GaN technology. It holds a solid hope to be hardened against single-event burnout (SEB) due to its superior thermal conductivity. Euclid Beamlabs, in collaboration with RPI, will develop an advanced quasi-lateral diamond power MOSFET (QLDT) that will combine the inherent advantages of diamond material, SEB hardened transistor design with advanced 3D femtosecond laser writing capabilities of conductive wires fabrication inside the diamond. The project's primary focus is  SEB-tolerant diamond transistor design with a 2DHG conductive channel and graphitized vertical embedded connections. Full 3D simulations of QLDTs in Sentaurus at supercomputer facilities. Optimization of channel and drift region design, doping, 2DHG and vertical conducting path for best electrical properties. Advanced electrothermal simulations of QLDTs at varying conditions (gate voltages, ionizing particle hit location, and angle of incidence) under SEB conditions. Fabrication and electrical characterization of diamond power MOSFETs and diodes, following fabrication process flow outlined in Phase 1. Several iterations will be performed to optimize the fabrication procedure and device characteristics. Fabrication of final QLDT prototype and comparison key metrics with COTS SiC power devices of the same blocking voltage and conduction current ratings. SEB radiation tolerance testing of QLDT (Cyclotron Institute at TAMU). Deliverable at the end of Phase II: working prototype of SEB-hard diamond power transistor, heavy-ion tolerance testing at the terrestrial facility: Target parameters: VBD=1200+V, RDS(on),sp=1 mOhm·cm2, high current density (100+ A/cm2).  

The technology has immediate application for radiation-hardened power electronics circuits in exploring atmospheric planets, Moon to Mars, and Commercial Lunar Payload Services (CLPS) missions. It has a strong potential to advance current state-of-the-art electronics on revolutionary spacecraft design with reduced size, weight, and power while increasing overall system efficiency, longevity, and performance.   The developed technology has the potential to be commercialized for a wide set of goals with hostile environments and high-temperature operation regimes. It will overcome the limitations of current state-of-the-art high-temperature, cost-effective power electronics technology. The all-carbon technology will find its applications in military electronics, high-energy physics, and medical radiology.

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