High Temperature Modular Integrated SiC Power Converter Platform

We are proposing to expand on our development of unique Silicon Carbide (SiC) electronics in multiple device classes and application areas by further innovation and integration into a single flexible, modular technology. Starting from our work in the Phase II program, we will develop a next generation of our SiC Power Laterally-Diffused Metal-Oxide-Semiconductor (LDMOS) Field Effect Transistors, which enable significantly greater power transfer and modular integration with SiC complementary metal-oxide-semiconductor (CMOS) electronics. We will also improve the performance of our SiC CMOS technology, particularly in transistor sizing and speed. We will enhance our UV optoelectronics technology by integrating our SiC UV sensors with these improved CMOS devices. Further levels of integration, such as on-chip power converter topologies, such as half- and full-bridges of SiC LDMOS devices, integrated with SiC CMOS circuits for control, will also be pursued. We will use our physics-based device and process modeling experience for these efforts, and our long-term high-temperature characterization and reliability testing capabilities to test all these device classes at temperatures up to 500 C for the ranges of hundreds of hours. As the culmination of this new development effort, we are going to produce a Process Design Kit (PDK) to enable outside users, in particular NASA designers, to use this technology. The PDK will bring together device characteristics, layer lists, design rules, SPICE models, and parametric cells for designing in this expanded, flexible technology. This complete development package will allow users to take advantage of the considerable benefits of SiC, such as its high-temperature resilience, extremely low dark current, having SiO2 as a native oxide, and its visible-blindness in UV-sensing applications, even at high temperatures, its inherent visible-blindness, and its capability to grow a native oxide, in a singularly broad technology base.

Harsh environment SiC power converters have wide cost-effective applications in (a) spacecraft power management, (b) DC distribution systems in Venus/Mercury/Mars exploration, (c) motor drives, inverters and power supply derivatives in the Space Station, satellite power systems, and (d) motor drives in 'more electric' technology applied to spacecraft and space vehicles. SiC technology finds applications in harsh environments for SiC based control and driver integrated circuits and sensors, where regular Si technology cannot operate. Applications of high temperature (500C) harsh environment SiC power electronics include: (a) automotive engine control and exhaust monitoring (b) power management systems in ground and aerospace vehicles (c) electrical actuator and motors drives in jet engines, (d) geothermal energy monitoring, (e) smart high-temperature sensors, (f) controls for furnaces, gas turbines and nuclear power plants.

This is early/mid-stage (TRL 4) — the most realistic path in is NASA SBIR/STTR, which funds small businesses and research institutions to develop technology aligned with NASA's needs (equity-free, phased funding). Check whether a current SBIR/STTR solicitation topic overlaps with this project's technology area, or contact the project directly (above) to ask.

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