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Microgravity-Enhanced Annealing of MoS2 for Radiation-Hardened Electronics
Active
TRL 3 (started at 3, targeting 5)
Description
This project investigates microgravity-enhanced annealing of Molybdenum Disulfide (MoS2) semiconductors to overcome current manufacturing limitations. Despite advances in metal-organic chemical vapor deposition (MOCVD) growth techniques, MoS2 films suffer from small grain sizes (20-50 μm), high grain boundary density, excessive adlayer formation, sulfur vacancies, and incomplete substrate coverage. These defects severely limit their use in radiation-hardened electronics for space applications.
This approach employs a specialized four-chamber vacuum furnace system operating at 700 °C and <150 mTorr to anneal MoS2wafers during parabolic flight. Eliminating gravity during the critical annealing phase may remove buoyancy-driven convection, sedimentation, and gravitational stress, which could enable superior atomic rearrangement and crystallization. Target improvements include >50% grain size increase, >30% reduction in adlayers, and enhanced uniformity across four-inch wafers.
The parabolic flight campaign provides approximately 30 maneuvers per flight with approximately 20 seconds of microgravity each, accumulating sufficient annealing time while maintaining precise thermal control. This system processes four samples simultaneously with synchronized data collection (temperature, pressure, acceleration, optical imaging), yielding results from eight total samples across two flights. The repeated gravity transitions (0 g to 1.8 g) enable direct comparison of crystallization behavior under different gravitational conditions within the same thermal cycle.
Expected outcomes include: 1. Quantitative material characterization (Raman spectroscopy, atomic force microscopy, transmission electron microscopy) validating microgravity benefits 2. Optimized process parameters linking gravity levels to material quality 3. Advancement from TRL 3 to TRL 5, positioning for demonstration aboard the International Space Station 4. Peer-reviewed publications on microgravity effects on 2D materials 5. Data supporting follow-on proposals to ISS National Laboratory and for commercial space manufacturing 6. Industry engagement for potential technology transfer
This investigation represents the first systematic study of 2D semiconductor annealing in microgravity, potentially revealing new pathways to achieve the material quality required for next-generation electronics while establishing foundational processes for space-based semiconductor manufacturing aligned with NASA's In-Space Production Applications (InSPA) objectives.
Benefits
NASA Missions: Improved radiation-hardened MoS2 semiconductors would enhance reliability of electronics for future deep space missions where conventional semiconductors degrade from cosmic radiation exposure. Applications include long-duration lunar surface operations, Mars sample return missions, and outer planet exploration requiring decades of operation. The technology directly supports InSPA objectives by validating semiconductor manufacturing processes for future orbital facilities.
Other Government Agencies: Department of Defense satellites require radiation-tolerant electronics for nuclear event survivability and extended operation in Van Allen radiation belts. The National Oceanic and Atmospheric Administration needs robust semiconductors for weather satellites operating in harsh radiation environments.
Commercial Space Industry: Satellite constellation operators could extend satellite lifetimes with superior radiation-hardened components. Emerging space manufacturing companies gain validated processes for semiconductor production in orbital facilities. Terrestrial semiconductor manufacturers benefit from new insights into defect reduction mechanisms applicable to ground-based fabrication.
National Impact: Advances United States semiconductor manufacturing capabilities per Creating Helpful Incentives to Produce Semiconductors (CHIPS) Act priorities. Establishes technological foundation for space-based semiconductor production, reducing dependence on foreign suppliers for critical space components. Demonstrates feasibility of high-value manufacturing in microgravity, positioning American companies to lead the emerging space economy.
This dual-use technology simultaneously advances space electronics reliability and terrestrial semiconductor manufacturing quality.
Details
| Technology area | Materials, Structures, Mechanical Systems, and Manufacturing > Manufacturing > Manufacturing Processes |
| Program | Flight Opportunities (FO) |
| Lead organization | GOEPPERT, LLC, Philadelphia, PA |
| Start date | 2025-06-01 |
| End date | 2028-04-30 |
Project contacts
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