Cubic BN Diodes and Transistors

In support of missions to the Moon, Mars, and the Sun, NASA needs high-voltage, high-current power electronic components that tolerate heavy-ion-radiation-induced damage without catastrophic failure. Diodes with 1200V 40A capability and transistors that operate at 600V 40A (after any needed de-rating for operation in high radiation environments) are desired for use in space-based power systems. Even after ~25 years of development, space-qualified GaN components are limited to 300V operation in space. In 2014, Hirama and colleagues at NTT demonstrated the MBE growth of cubic BN [1-2] on (100) diamond substrates. In 2022, Storm [3] at NRL reproduced the Japanese MBE growth result. In 2022, OSEMI custom-built a c-BN MBE system in the configuration described by Hirama and utilized it to demonstrate the initial growth of c-BN epitaxial layers in 2023. In our recently completed NASA Phase I effort, OSEMI brought an MBE machine up and used it to grow BN-on-Silicon wafers. Our Phase II effort proposes to continue and extend our preliminary work on c-BN epitaxy to lower defect density, establish n-type and p-type doping in c-BN, and make diodes and MESFET and Gate Injection Transistors (GIT) in c-BN. Initially, the growth and processing of n and p-type diode samples and diodes will be investigated on 2-inch diameter substrates. We will also attempt the growth and fabrication of a lateral c-BN MESFET followed by a c-BN Gate Injection Transistor with further refinements of all three devices, potentially including radiation tolerance life testing in a Phase II sequential program. The goal of this first Phase II effort will be to establish the growth and fabrication technology for the proposed c-BN MESFET and GIT transistors, complete device characterization and one round of standard life testing, and achieve a new generation of c-BN Power Electronic Components and RF devices to provide a foundation for a next generation of chemically inert radiation tolerant power subsystems.

C-BN power electronic components are anticipated to positively impact the development and reliability of power distribution systems utilized in NASA missions. The resulting electronics are anticipated to possess higher performance and reliability than GaN or SiC-based components. Our proposed c-BN electronics items shall enable next-generation space vehicles useful in studying Venus and the Sun. Our c-BN technology has been deemed ITAR during the Phase I SBIR contracting process. So while we anticipate that c-BN-on-Silicon has the potential to replace GaN-on-Silicon in commercial power electronics, we believe that the main non-NASA applications for this particular device technology shall be in Defense and be helpful in providing improved electronics for RADAR for hypersonic missile intercept vehicles with further options for extreme environment electronics operating to 800°C based on cubic Boron Nitride semiconductors and ICs.

This is a mature technology (TRL 7+) — the realistic path in is usually NASA's Technology Transfer Program: licensing an existing NASA patent, or a Space Act Agreement to use NASA facilities/expertise directly. NASA also runs a startup licensing program with no upfront fee for companies formed to commercialize a specific NASA technology.

None of these are guaranteed paths for this specific project — TechPort itself doesn't have an "apply" button. Reaching out to the contact(s) above with a specific question is usually the fastest way to find out what's actually open.