ZnO UV Detectors, Phase II

High-efficiency UV detectors will be developed in the Phase II program with ZnO and its alloy (ZnBeO). ZnO and ZnBeO are a very suitable material for fabrication of high-speed, high-detectivity, and radiation-hard UV detectors due to their unique structural, electrical and optical properties. The proposing company (MOXtronics) has shown the feasibility of fabricating new ZnO p-i-n UV detectors in the Phase I. Such UV photodiodes will be improved for high-efficiency UV detection by using heterojunction p-i-n structures and/or Schottky contacts. In the Phase II efforts, commercial-typed heteojunction ZnO/ZnBeO-based PIN and MSM photodiodes will be fabricated and demonstrated. These photodiodes will be used for broad near-to-far UV detection.

This is a mature technology (TRL 7+) — the realistic path in is usually NASA's Technology Transfer Program: licensing an existing NASA patent, or a Space Act Agreement to use NASA facilities/expertise directly. NASA also runs a startup licensing program with no upfront fee for companies formed to commercialize a specific NASA technology.

None of these are guaranteed paths for this specific project — TechPort itself doesn't have an "apply" button. Reaching out to the contact(s) above with a specific question is usually the fastest way to find out what's actually open.