ZnO UV Detectors, Phase I

Radiation-hard UV detectors will be developed with ZnO in Phase I efforts by MOXtronics, Inc. (MOX). ZnO is a very suitable material for fabrication of high-speed, high-detectivity, and radiation-hard UV detectors due to its unique structural, electrical and optical properties. MOX has achieved several breakthroughs for making p-type ZnO and ZnO p-n junction/Schottky diodes, which allows fabrication of ZnO UV detectors. High-efficiency ZnO UV detectors will be fabricated on ZnO substrates by using ZnO PIN structures. In Phase I, ZnO PIN diodes for UV detection will be fabricated and demonstrated. High-efficiency solar-blind ZnO UV detectors will be developed in future Phase II efforts.

This is a mature technology (TRL 7+) — the realistic path in is usually NASA's Technology Transfer Program: licensing an existing NASA patent, or a Space Act Agreement to use NASA facilities/expertise directly. NASA also runs a startup licensing program with no upfront fee for companies formed to commercialize a specific NASA technology.

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