High Performance Dual Band Photodetector Arrays for MWIR/LWIR Imaging, Phase II

This proposed Phase II program seeks to create dual-band pixel-collocated MWIR/LWIR photodetector arrays based on III-V semiconductor materials in a Type-II superlattice structure. The Type-II superlattice offers a customizable cutoff wavelength while maintaining a lattice-matched condition to the host substrate. This superlattice also has lower Auger-recombination, which reduces dark current noise, than HgCdTe solutions, and is sensitive to normal incidence radiation, in contrast to QWIP approaches. The Phase I efforts successfully designed, fabricated and characterized a Type-II dual band IR photodetector. The superlattice material growth will be further optimized in the Phase II, along with modifying the fabrication steps required to realize dual-band photodetector arrays.

This is a mature technology (TRL 7+) — the realistic path in is usually NASA's Technology Transfer Program: licensing an existing NASA patent, or a Space Act Agreement to use NASA facilities/expertise directly. NASA also runs a startup licensing program with no upfront fee for companies formed to commercialize a specific NASA technology.

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