Integrated L-Band T/R Module, Phase II

The goal of this Phase II project is to deliver an integrated L-band transmit/receive (T/R) module which will be fabricated from a GaAs-based combined HBT/PHEMT epistructure. The T/R module will consist of a power amplifier, a low noise amplifier, and two switches. The performance goal for the low noise amplifier is 30 dB gain with a less than 1.0 dB noise figure. The performance goal for the power amplifier is 30 dB gain, 34 dBm (2.5 W) output power, and efficiency greater than 60%. The performance goal for the switches is that they not materially affect the operation of the amplifiers. All components will be fully integrated on a single substrate. Post Phase II work includes the integration of a phase shifter, amplitude modulator, and control and interface circuitry on the same chip. We estimate the technology readiness level at the end of the Phase II program to be 6 or 7.

This is a mature technology (TRL 7+) — the realistic path in is usually NASA's Technology Transfer Program: licensing an existing NASA patent, or a Space Act Agreement to use NASA facilities/expertise directly. NASA also runs a startup licensing program with no upfront fee for companies formed to commercialize a specific NASA technology.

None of these are guaranteed paths for this specific project — TechPort itself doesn't have an "apply" button. Reaching out to the contact(s) above with a specific question is usually the fastest way to find out what's actually open.