SiC Avalanche Photodiodes and Arrays, Phase II

In this Phase 2 SBIR program submitted to National Aeronautics and Space Administration (NASA) in response to Topic S1.05 (Detector Technologies for UV, X-Ray, Gamma-Ray and Cosmic-Ray Instruments), Aymont Technology, Inc. (Aymont) and GE Global Research will enable high-sensitivity ultraviolet imaging. We will build upon our Phase 1 result showing working SiC UV avalanche photodiodes with high quantum efficiency as well as GE's product expertise in SiC photodiodes. Our team will demonstrate 16 x 16 arrays of SiC photodiodes including electronics for visible-blind high-sensitivity ultraviolet (UV) detection. We will demonstrate imaging using these arrays at UV wavelengths. In order to enable large scale arrays needed for future NASA missions, we will also demonstrate a 3 x 3 array of SiC photodiodes and avalanche photodiodes without front side contacts. In Phase 3, this array will be scaled to VGA dimensions (640 x 480) and utilized by NASA and others as the best-performing choice for UV imaging in space, satellite, security, and other applications. Additionally, APD arrays will be enabled. These will give the capability of imaging where each pixel has the sensitivity of a PMT.

This is a mature technology (TRL 7+) — the realistic path in is usually NASA's Technology Transfer Program: licensing an existing NASA patent, or a Space Act Agreement to use NASA facilities/expertise directly. NASA also runs a startup licensing program with no upfront fee for companies formed to commercialize a specific NASA technology.

None of these are guaranteed paths for this specific project — TechPort itself doesn't have an "apply" button. Reaching out to the contact(s) above with a specific question is usually the fastest way to find out what's actually open.