InGaN High Temperature Photovoltaic Cells, Phase I

The objective of this Phase I project is to demonstrate InGaN materials are appropriate for high operating temperature single junction solar cells. Single junction InGaN test devices with bandgaps between 2.0 and 1.75 eV could provide power conversion in the 15-20% range while offering increased resistance to radiation damage. In this project, we will theoretically and experimentally optimize the doping profiles of p- and n-InGaN for high operating temperatures, fabricate test structures base on p-n junctions, and test the preliminary devices under concentrated sunlight and at temperatures from 100ºC to 250ºC. At the end of the Phase I, the technology will be at TRL 3.

This is a mature technology (TRL 7+) — the realistic path in is usually NASA's Technology Transfer Program: licensing an existing NASA patent, or a Space Act Agreement to use NASA facilities/expertise directly. NASA also runs a startup licensing program with no upfront fee for companies formed to commercialize a specific NASA technology.

None of these are guaranteed paths for this specific project — TechPort itself doesn't have an "apply" button. Reaching out to the contact(s) above with a specific question is usually the fastest way to find out what's actually open.