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Cryogenic Etching of Ultra-Low Reflective Black-Silicon for NIR, mid-IR and Submillimeter Wavelengths

Completed TRL 4 (started at 2, targeting 4)

Description

Investigate and manipulate the cryogenic etching process, the geometry of the silicon needles, and resistivity of the wafer to achieve BSI with maximum absorption tuned to the wavelength range of NIR, mid-IR, and submillimeter followed by optical characterization of the etched wafers.

Benefits

Instruments used in LUVOIR, LISA, CMB, OST, MIDEX, and SOFIA/balloon suborbital opportunities.

Details

Technology areaSensors and Instruments > In Situ Instruments and Sensors
ProgramCenter Independent Research & Development: GSFC IRAD (GSFC IRAD)
Lead organizationGoddard Space Flight Center, Greenbelt, MD
Start date2019-10-01
End date2020-09-30

Project contacts

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