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Large Area Topological 2D Materials for Spintronics and Energy Efficient Electronics

Completed TRL 3 (started at 2, targeting 3)

Description

This proposal seeks to develop a scalable large-area synthesis method with precise thickness control for WTe2 and MoTe2 Wey semimetal thin films for next generation electronics that are spin-polarized and low-energy-dissipative. The exotic topological properties predicted in these Weyl semimetals can enable electronic devices critical for space-faring missions, such as quantum devices that are robust against noise and fluctuations and high-speed electronics that are immune to the harsh radiation in space. Despite these promises, a synthesis method that can grow large-area WTe2 and MoTe2 thin films with precise thickness control from monolayer to several layers is lacking. While chemical vapor deposition (CVD) is widely used to grow many two-dimension (2D) materials, CVD growth of WTe2 and MoTe2 remains challenging. We propose industry-compatible atomic layer deposition (ALD) as a growth method to synthesize the Weyl semimetals with thicknesses from monolayers to several layers. The proposal builds upon our preliminary results that showed successful conversion of ~ 1 cm2-area ALD-deposited WO3 thin films to ~ 8 layer-thick WTe2 thin films. Four research aims are proposed: 1) Synthesis of WTe2 and MoTe2 monolayers and thin films via tellurization of ALD-deposited WOx and MoOx, 2) Investigation of the effects of a capping layer and substrate on transport properties of WTe and MoTe2 3) Wafer-scale transfer of the synthesized films to arbitrary substrates, and 4) Realization of the quantum spin Hall state in the monolayer WTe2 and MoTe2. Possible research experiences with NASA technologists include conducting research at the microfabrication facility(JPL) to develop high quality capping layers or study the radiation effects on the electronic properties of WTe2 and MoTe2. The broad impacts of the proposal is to realize large-area topological thin films that can be a material platform for future electronics, including NASA-specific electronic devices.

Benefits

The broad impacts of the proposal is to realize large-area topological thin films that can be a material platform for future electronics, including NASA-specific electronic devices.

Details

Technology areaMaterials, Structures, Mechanical Systems, and Manufacturing > Materials > Materials for Electrical Power Generation, Energy Storage, Power Distribution, and Electrical Machines
ProgramSpace Technology Research Grants (STRG)
Lead organizationYale University, New Haven, CT
Start date2019-08-28
End date2023-05-22

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